PROPERTIES OF DRY ETCH PROCESS


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PROPERTIES OF DRY ETCH PROCESS
PROPERTIES OF DRY ETCH PROCESSThere are two types of methods of etching: chemical and physical. These combine to form four basic plasma processes: sputtering or physical, chemical, ion-energy-driven, and ion-enhanced inhibitor etching. Chemical etch is performed by free radicals that bombard the target with a near uniform angular distribution. This process is characterized by high etch rates and occurs in high-pressure conditions. Physical etch is performed by the sputtering of ions and is an anisotropic process. Anisotropy is defined as the ratio of the vertical etch to the horizontal etch. With this process only a marginal amount of sidewall removal occurs. This is the only etch process that can remove nonvolatile material from the target. As compared to chemical etch, the selectiv…
Citation
Hwaiyu Geng, CMfgE, PE: Semiconductor Manufacturing Handbook, Second Edition. PROPERTIES OF DRY ETCH PROCESS, Chapter (McGraw-Hill Professional, 2018 2005), AccessEngineering Export