ADVANCED PLASMA PROCESSING CONTROL


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ADVANCED PLASMA PROCESSING CONTROL
ADVANCED PLASMA PROCESSING CONTROLThe RF configuration for modern plasma deposition and etch reactors vary by the number of RF power supplies and the corresponding driven frequency. It is well established for plasma assisted surface interactions the importance of the frequency drive and the phase relation of the RF with the sheath dynamics [62]. In terms of pattern etching, there are three primary factors to etching: (a) physical ion bombardment, EP; (b) chemical etch by neutral radicals, EC; and (c) ion-induced through ion bombardment, EI
Citation
Hwaiyu Geng, CMfgE, PE: Semiconductor Manufacturing Handbook, Second Edition. ADVANCED PLASMA PROCESSING CONTROL, Chapter (McGraw-Hill Professional, 2018 2005), AccessEngineering Export