PROCESS CONTROL AND DIAGNOSTICS


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PROCESS CONTROL AND DIAGNOSTICS
PROCESS CONTROL AND DIAGNOSTICSBased on the derivations for inductively and capacitively coupled sources, it becomes evident that the control of the RF source is a principal control point of the plasma source. The significant physical component of the discharge is the delivery of RF power into the plasma. For the inductively coupled source, the power absorbed by the plasma was through the induced RF current. Conversely, the power absorbed by the capacitively coupled discharge was through the induced RF voltage. It is through these interactions that the RF source controls the stability of the plasma and the processing conditions. Typically, etch rate is a parameter that is controlled for a particular process. The block diagram in
Citation
Hwaiyu Geng, CMfgE, PE: Semiconductor Manufacturing Handbook, Second Edition. PROCESS CONTROL AND DIAGNOSTICS, Chapter (McGraw-Hill Professional, 2018 2005), AccessEngineering Export