FUNDAMENTALS OF PLASMA GENERATION AND PROCESS CONTROL


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FUNDAMENTALS OF PLASMA GENERATION AND PROCESS CONTROL
FUNDAMENTALS OF PLASMA GENERATION AND PROCESS CONTROLIn this section, the development of a physical model for low-temperature, high-density plasma reactors are described. The model for an inductively coupled plasma (ICP) source is first developed. This is then followed by a capacitive-coupled parallel plate. In each subsection, models, theories, and practices are explored.
Inductively Coupled Plasma Sources The simplest form of an ICP source is shown in Fig. 43.1. The RF source produces a current to flow through the coil. The coil surrounds the cylindrical chamber formed by the tu…
Citation
Hwaiyu Geng, CMfgE, PE: Semiconductor Manufacturing Handbook, Second Edition. FUNDAMENTALS OF PLASMA GENERATION AND PROCESS CONTROL, Chapter (McGraw-Hill Professional, 2018 2005), AccessEngineering Export