CMP INTERACTIONS


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CMP INTERACTIONS
CMP INTERACTIONSThe targets for dishing and erosion on Cu lines continue to decrease with each successive generation of devices. Achieving these targets consistently in manufacturing will require slurries formulated to the specific materials system, pads with excellent surface texture control and processes with razor-sharp endpoint and/or high selectivity to a stop layer. Dishing and erosion, which together account for nearly 50 percent of yield losses in copper processing, are the most important effects to be minimized in the copper CMP process. Dishing and erosion are forms of local planarization where areas of the wafer polish faster than others. In dishing, the copper is dished out of the lines whereas in erosion whole sections of the die are polished faster than others [
Citation
Hwaiyu Geng, CMfgE, PE: Semiconductor Manufacturing Handbook, Second Edition. CMP INTERACTIONS, Chapter (McGraw-Hill Professional, 2018 2005), AccessEngineering Export