CONSIDERATIONS IN SELECTING AN APPROPRIATE PRECURSOR AND REACTANT FOR ALD


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CONSIDERATIONS IN SELECTING AN APPROPRIATE PRECURSOR AND REACTANT FOR ALD
CONSIDERATIONS IN SELECTING AN APPROPRIATE PRECURSOR AND REACTANT FOR ALDFormally, the ALD process utilizes surface-supported half-reactions to grow a particular material. This requires that the precursor can be strongly bound to the surface by chemisorption, whereby the parent molecule dissociates, with the precursor bonding directly with the surface atoms. However, it is equally important that the adsorbed species be stable, and not undergo further decomposition spontaneously on the surface, as this would lead to uncontrolled deposition on the surface.One well known example is the ALD growth of Al2O3 from trimethylaluminum and water; there the precursor methyl groups r…
Citation
Hwaiyu Geng, CMfgE, PE: Semiconductor Manufacturing Handbook, Second Edition. CONSIDERATIONS IN SELECTING AN APPROPRIATE PRECURSOR AND REACTANT FOR ALD, Chapter (McGraw-Hill Professional, 2018 2005), AccessEngineering Export