ALD FOR FRONT END OF THE LINE SEMICONDUCTOR MANUFACTURING APPLICATIONS


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ALD FOR FRONT END OF THE LINE SEMICONDUCTOR MANUFACTURING APPLICATIONS
ALD FOR FRONT END OF THE LINE SEMICONDUCTOR MANUFACTURING APPLICATIONSAs noted, the primary front end of the line (FEOL) application for ALD has been for the gate dielectric layer. As device scaling led to the need to replace SiO2 with a higher dielectric constant (high-κ) material for the gate, this was coupled with the need to establish a manufacturable fabrication approach. Owing to the physical thickness tolerances for these layers that effectively dictate atomic-level thickness control over a full wafer surface, ALD is a clear candidate. Moreover, the need to preserve the integrity of the semiconductor channel beneath the dielectric discouraged the use of a technique such as sputtering due to potential surface damage in…
Citation
Hwaiyu Geng, CMfgE, PE: Semiconductor Manufacturing Handbook, Second Edition. ALD FOR FRONT END OF THE LINE SEMICONDUCTOR MANUFACTURING APPLICATIONS, Chapter (McGraw-Hill Professional, 2018 2005), AccessEngineering Export