CONCLUSION


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CONCLUSION
CONCLUSIONIn the era of big data and Internet of Things, microelectronic Si devices will go less than 10 nm node, so most building blocks of the device will be in nanoscale. In this chapter, we review the challenges in S/D and gate contacts in FinFET technology as well as the epitaxial nucleation and growth of silicide in Si nanowires. The contact resistance in FinFET devices is a critical issue. We have discussed several approaches to reduce it. Especially we review the epitaxial NiSi in [111] oriented Si nanowires. This is because we expect an epitaxial interface may have a low contact resistance. However, Si nanowires can grow in [111] and [110] directions, but not in [100] direction. Yet Si wafer are all [100] oriented. Clearly there is a need to study nanoscale epitaxial growth of NiSi on [100] Si. We…
Citation
Hwaiyu Geng, CMfgE, PE: Semiconductor Manufacturing Handbook, Second Edition. CONCLUSION, Chapter (McGraw-Hill Professional, 2018 2005), AccessEngineering Export