RECENT ADVANCES IN NANOSCALE SILICIDE FORMATION


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RECENT ADVANCES IN NANOSCALE SILICIDE FORMATION
RECENT ADVANCES IN NANOSCALE SILICIDE FORMATION
Introduction Silicide has been an essential building block in Si-based technology owing to its outstanding physical property to serve as electrical source, drain, and gate contacts, and the precision control of the salicide process to form the contacts. The formation mechanism of silicide by solid-state interfacial reaction in forming a low-resistance silicide thin film phase such as C-54 TiSi2, NiSi, or CoSi2 has been reported and reviewed. In our previous review, we have emphasized the growth events of thin film silicides on Si wafers.
Citation
Hwaiyu Geng, CMfgE, PE: Semiconductor Manufacturing Handbook, Second Edition. RECENT ADVANCES IN NANOSCALE SILICIDE FORMATION, Chapter (McGraw-Hill Professional, 2018 2005), AccessEngineering Export