OVERVIEW


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OVERVIEW
OVERVIEWThe planar MOSFETs faced various fundamental and technological challenges in the Moore's law scaling in the nanometer regime. Owing to the presence of multiple gates, fin field effect transistors (FinFETs) have emerged as their successors. FinFETs are able to tackle short-channel effects better than traditional planar MOSFETs at deep nanometer technology nodes and thus enable continuous Moore's law scaling. In this chapter, we briefly review the history, fundamentals, and future challenges for the transition from planar FET to FinFET. We then focus on one of the major FinFET challenges about source/drain parasitic resistance and survey recent advances in nanoscale silicide formation. As we know that silicide of C-54 TiSi2, CoSi2, and NiSi have been widely …
Citation
Hwaiyu Geng, CMfgE, PE: Semiconductor Manufacturing Handbook, Second Edition. OVERVIEW, Chapter (McGraw-Hill Professional, 2018 2005), AccessEngineering Export