The MOS Modelling


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The MOS Modelling
10106081030700 The MOS ModellingThis chapter introduces CMOS transistor modelling. The static characteristics of n-channel and p-channel MOS devices are shown, with details of the maximum current and its relationship with the sizing, the threshold voltage and various second order effects. Three generations of MOS device models are introduced. Firstly, the original MOS model 1 is presented, as it was proposed in the early versions of the SPICE simulator developed by the University of Berkeley, California. We demonstrate the inaccuracies of this model. Secondly, we introduce the semi-empirical model 3, which is still in use for MOS device simulation with a channel length greater than 1 μm. Thirdly, we present a sim…
Citation
Etienne Sicard; Sonia Delmas Bendhia: Basics of CMOS Cell Design. The MOS Modelling, Chapter (McGraw-Hill Professional, 2007), AccessEngineering Export